{"id":115585,"date":"2018-03-11T10:44:09","date_gmt":"2018-03-11T10:44:09","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/resistive-switching-in-hafnium-oxide\/"},"modified":"2018-03-11T10:44:09","modified_gmt":"2018-03-11T10:44:09","slug":"resistive-switching-in-hafnium-oxide","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica-del-estado-solido\/resistive-switching-in-hafnium-oxide\/","title":{"rendered":"Resistive switching in hafnium oxide"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Raul Zazpe Mendioroz <\/strong><\/h2>\n<p>La presente tesis estudia el fen\u00c2\u00bfmeno de resistive switching en dispositivos metal\/oxido\/metal basados en \u00c2\u00bfxido de hafnio (hfo2) para su potencial aplicaci\u00c2\u00bfn como memoria computacional no vol\u00c2\u00bftil. Los dispositivos objeto de estudio han sido fabricados por medio de fotolitograf\u00c2\u00bfa y m\u00c2\u00bftodos de deposici\u00c2\u00bfn de materiales met\u00c2\u00bflicos para los electrodos. Por su parte la pel\u00c2\u00bfcula el hfo2 de 20 nanometros de espesor fue crecida mediante atomic layer deposition de una forma completamente reproducible. Dispositivos con diferentes electrodos met\u00c2\u00bflicos fueron caracterizados el\u00c2\u00bfctricamente para analizar el fen\u00c2\u00bfmeno de resistive switching y el impacto en el mismo de los diferentes metales y utilizados como electrodos. En particular, el dispositivo ti\/hfo2\/co mostr\u00c2\u00bf notables caracter\u00c2\u00bfsticas de reproducibilidad y estabilidad lo cual indujo una caracterizaci\u00c2\u00bfn m\u00c2\u00bfs profunda para analizar sus propiedades como memoria no vol\u00c2\u00bftil. Los resultados de diversas caracterizaciones indicaron buenas propiedades de memoria no vol\u00c2\u00bftil mientras que diferentes protocolos de medida proporcionaron informaci\u00c2\u00bfn muy significativa. De este modo, diferentes resultados experimentales sugirieron que ambas interfaces \u00c2\u00bfxido\/metal del dispositivo eran activas y presentaban resitive switching bajo la acci\u00c2\u00bfn de un campo el\u00c2\u00bfctrico. Por otra parte se realiz\u00c2\u00bf un extenso estudio del efecto de las condiciones de crecimiento del hfo2 mediante atomic layer deposition cuyos resultados, junto con los ya obtenidos en previas caracterizaciones, permitieron sugerir un origen y un mecanismo del efecto de resistive switching en nuestro dispositivos.As\u00c2\u00bf, la resistencia de ambas interfaces es modulada por la distribuci\u00c2\u00bfn de vacantes de ox\u00c2\u00bfgeno que son atra\u00c2\u00bfdas\/repelidas de dichas interfaces en funci\u00c2\u00bfn del campo el\u00c2\u00bfctrico aplicado. Un an\u00c2\u00bflisis qu\u00c2\u00bfmico realizado mediante x-ray phothoelectron spectroscopy ha permitido establecer una correlaci\u00c2\u00bfn f\u00c2\u00bfsica entre las condiciones de crecimiento de los dispositivos y la respuesta el\u00c2\u00bfctrica de los mismos en reacci\u00c2\u00bfn al efecto de resistive switching basada en la presencia de vacantes de ox\u00c2\u00bfogeno en las regiones de interfaz. Finalmente, un marco matem\u00c2\u00bftico asumiendo este escenario fue desarrollado y conform\u00c2\u00bf los resultados experimentales verificando de este modo el mecanismo de resistive switching sugerido<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Resistive switching in hafnium oxide<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Resistive switching in hafnium oxide <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Raul Zazpe Mendioroz <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Pa\u00eds vasco\/euskal herriko unibertsitatea<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 30\/04\/2014<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Luis Eduardo Hueso Arroyo<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: carmen Ocal <\/li>\n<li>Jos\u00e9 Francisco Rivadulla fernandez (vocal)<\/li>\n<li>ivo nuno Saldanha souza (vocal)<\/li>\n<li>Jos\u00e9 Rivas rey (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Raul Zazpe Mendioroz La presente tesis estudia el fen\u00c2\u00bfmeno de resistive switching en dispositivos metal\/oxido\/metal basados en [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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