{"id":118827,"date":"2022-08-03T10:05:18","date_gmt":"2022-08-03T10:05:18","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/caracterizacion-de-capas-delgadas-de-silicio-obtenidas-mediante-evaporacion-con-haz-de-electrones\/"},"modified":"2022-08-03T10:05:18","modified_gmt":"2022-08-03T10:05:18","slug":"caracterizacion-de-capas-delgadas-de-silicio-obtenidas-mediante-evaporacion-con-haz-de-electrones","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/caracterizacion-de-capas-delgadas-de-silicio-obtenidas-mediante-evaporacion-con-haz-de-electrones\/","title":{"rendered":"Caracterizacion de capas delgadas de silicio obtenidas mediante evaporacion con haz de electrones."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Ignacio Esquivias Moscardo <\/strong><\/h2>\n<p>Se presenta el desarrollo de un metodo de obtencion de capas delgadas de siliciomediante evaporacion con haz de electrones  la caracterizacion del material obtenido en cuanto a su estructura morfologica y cristalina propiedades opticasy electricas  y la fabricacion y medida de diversos dispositivos realizados con este material. Los resultados indican que la estructura morfologica es de tipo microcolumnar  siendo el material amorfo o policristalino segun la temperatura de deposicion sea inferior o superior a 400 c respectivamente. Se propone un modelo de mezcla de fases amorfa y cristalina que explica satisfactoriamente los resultados obtenidos en cuanto a propiedades opticas electricas y caracteristicas de los dispositivos.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Caracterizacion de capas delgadas de silicio obtenidas mediante evaporacion con haz de electrones.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Caracterizacion de capas delgadas de silicio obtenidas mediante evaporacion con haz de electrones. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Ignacio Esquivias Moscardo <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Polit\u00e9cnica de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1984<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Tomas Rodriguez Rodriguez<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Antonio Luque Lopez <\/li>\n<li>Fernando Rueda Sanchez (vocal)<\/li>\n<li>Elias Mu\u00f1oz Merino (vocal)<\/li>\n<li>  (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Ignacio Esquivias Moscardo Se presenta el desarrollo de un metodo de obtencion de capas delgadas de siliciomediante [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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