{"id":12140,"date":"2001-10-07T00:00:00","date_gmt":"2001-10-07T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/pasivacion-de-superficies-semiconductoras-y-su-influencia-en-las-interfases-metal-semiconductor\/"},"modified":"2001-10-07T00:00:00","modified_gmt":"2001-10-07T00:00:00","slug":"pasivacion-de-superficies-semiconductoras-y-su-influencia-en-las-interfases-metal-semiconductor","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/pasivacion-de-superficies-semiconductoras-y-su-influencia-en-las-interfases-metal-semiconductor\/","title":{"rendered":"Pasivaci\u00f3n de superficies semiconductoras y su influencia en las interfases metal-semiconductor"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Marta Mart\u00edn Fern\u00e1ndez <\/strong><\/h2>\n<p>El objetivo fundamental de la tesis es contribuir al mejor entendimiento de fen\u00f3menos b\u00e1sicos tales como la pasivaci\u00f3n de las superficies de semiconductores, y su influencia en el crecimiento de interfases metal\/semiconductor.  la estrategia experimental adoptada ha constado de dos etapas diferenciales:  a,- en la primera, nos hemos concentrado en la preparaci\u00f3n y caracterizaci\u00f3n de superficies o semiconductores, en concreto de silicio, pasivadas. La saturaci\u00f3n de los enlaces libres presentes en las \u00faltimas capas del si(111), mediante la deposici\u00f3n h o sb, impide la formaci\u00f3n de complicadas reconstrucciones,produciendo una terminaci\u00f3n ideal del volumen. La capacidad de preparar superficies de semiconductores no reconstru\u00eddas es fundamental para determinar la contribuci\u00f3n de dichas reconstrucciones y del orden local en ciertas propiedades, as\u00ed como para el estudio de la estructura electr\u00f3nica del volumen a trav\u00e9s de su superifice. Adem\u00e1s, puede facilitar la interpretaci\u00f3n de los procesos de reacci\u00f3n que la tecnolog\u00eda del silicio involucra.  b,- en la segunda, hemos utilizado la pasivaci\u00f3n de superficies de semiconductores como punto de partida en el crecimiento de interfases metal\/semiconductor, y hemos estudiado c\u00f3mo y porqu\u00e9 las superficies pasivas modifican su formaci\u00f3n. en particular, hemos estudiado como la presencia de h saturando los enlaces libres presentes en la superficie si(111)-1&#215;1 influye, desde un punto de vista estructural, en el posterior crecimiento de los siliciros de hierro. asimismo, hemos crecido epitaxialmente y caracterizado la fase metaestable bcc del co sobre la superficie gaas (110) pasivada con sb, y analizado en detalle la influencia del sb en la calidad de la pel\u00edcula de co crecida.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Pasivaci\u00f3n de superficies semiconductoras y su influencia en las interfases metal-semiconductor<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Pasivaci\u00f3n de superficies semiconductoras y su influencia en las interfases metal-semiconductor <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Marta Mart\u00edn Fern\u00e1ndez <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Aut\u00f3noma de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 10\/07\/2001<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Asensio Ari\u00f1o M. Carmen<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal:  Sanz mart\u00ednez Jos\u00e9 Mar\u00eda (secretario) <\/li>\n<li>federico Soria gallego (vocal)<\/li>\n<li>alfredo Segura Garc\u00eda del r\u00edo (vocal)<\/li>\n<li>  (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Marta Mart\u00edn Fern\u00e1ndez El objetivo fundamental de la tesis es contribuir al mejor entendimiento de fen\u00f3menos b\u00e1sicos [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[199,1008,1604,8294],"tags":[27277,39755,14807,39754,39756],"class_list":["post-12140","post","type-post","status-publish","format-standard","hentry","category-fisica","category-fisica-del-estado-solido","category-semiconductores","category-superficies","tag-alfredo-segura-garcia-del-rio","tag-asensio-arino-m-carmen","tag-federico-soria-gallego","tag-marta-martin-fernandez","tag-sanz-Martinez-jose-maria-secretario"],"_links":{"self":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/12140","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/comments?post=12140"}],"version-history":[{"count":0,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/12140\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/media?parent=12140"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/categories?post=12140"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/tags?post=12140"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}