{"id":130184,"date":"1996-01-01T00:00:00","date_gmt":"1996-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/implantacion-ionica-en-silicio-simulacion-de-procesos-de-amorfizacion-y-recristalizacion\/"},"modified":"1996-01-01T00:00:00","modified_gmt":"1996-01-01T00:00:00","slug":"implantacion-ionica-en-silicio-simulacion-de-procesos-de-amorfizacion-y-recristalizacion","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/implantacion-ionica-en-silicio-simulacion-de-procesos-de-amorfizacion-y-recristalizacion\/","title":{"rendered":"Implantacion ionica en silicio: simulacion de procesos de amorfizacion y recristalizacion."},"content":{"rendered":"<h2>Tesis doctoral de <strong>  Caturla Terol M. Jose <\/strong><\/h2>\n<p>El objetivo fundamental de esta tesis es el estudio teorico, a nivel microscopico, del da\u00f1o producido en un semiconductor debido a la irradiacion con iones de baja energia. Se ha estudiado la amorfizacion del silicio debida al bombardeo ionico, asi como la recristalizacion del da\u00f1o producido, utilizando tecnicas de simulacion por ordenador como dinamica molecular y metodos monte carlo.  la principal aplicacion de estos estudios esta en la tecnolog\u00eda de dopado de semiconductores. En este trabajo demostramos la diferente morfolog\u00eda del da\u00f1o producido por iones ligeros y pesados al irradiar silicio. Iones pesados producen zonas amorfas en la red, mientras que iones ligeros forman peque\u00f1os grupos de defectos. Hemos estudiado el proceso de recristalizacion de las zonas amorfas y derivado consecuencias para la amorfizacion completa del material. Tambien simulamos la recristalizacion de una interfase plana amorfocristal inducida por iones de baja energia. Para poder estudiar fenomenos que suceden a tiempos largos, del orden del segundo o minutos, hemos acoplado dos metodos de simulacion: dinamica molecular y simulacion de difusion de defectos por monte carlo.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Implantacion ionica en silicio: simulacion de procesos de amorfizacion y recristalizacion.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Implantacion ionica en silicio: simulacion de procesos de amorfizacion y recristalizacion. <\/li>\n<li><strong>Autor:<\/strong>\u00a0  Caturla Terol M. Jose <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Universitat de val\u00e9ncia (estudi general)<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1996<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Diaz De La Rubia Tomas<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Alberto Gras Marti <\/li>\n<li> Rubio Garcia Jos\u00e9 Emiliano (vocal)<\/li>\n<li>Manuel Perlado Mart\u00edn (vocal)<\/li>\n<li>Isabel Abril Sanchez (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Caturla Terol M. Jose El objetivo fundamental de esta tesis es el estudio teorico, a nivel microscopico, [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[199,1008,6064,1604],"tags":[56764,243690,156345,52366,56763,243691],"class_list":["post-130184","post","type-post","status-publish","format-standard","hentry","category-fisica","category-fisica-del-estado-solido","category-interaccion-de-la-radiacion-con-los-solidos","category-semiconductores","tag-alberto-gras-marti","tag-caturla-terol-m-jose","tag-diaz-de-la-rubia-tomas","tag-isabel-abril-sanchez","tag-manuel-perlado-martin","tag-rubio-garcia-jose-emiliano"],"_links":{"self":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/130184","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/comments?post=130184"}],"version-history":[{"count":0,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/130184\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/media?parent=130184"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/categories?post=130184"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/tags?post=130184"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}