{"id":131377,"date":"1996-01-01T00:00:00","date_gmt":"1996-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/propiedades-electronicas-de-estructuras-semiconductoras-de-baja-dimensionalidad\/"},"modified":"1996-01-01T00:00:00","modified_gmt":"1996-01-01T00:00:00","slug":"propiedades-electronicas-de-estructuras-semiconductoras-de-baja-dimensionalidad","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/propiedades-electronicas-de-estructuras-semiconductoras-de-baja-dimensionalidad\/","title":{"rendered":"Propiedades electronicas de estructuras semiconductoras de baja dimensionalidad."},"content":{"rendered":"<h2>Tesis doctoral de <strong>  Porto Ortega Juan  Antonio <\/strong><\/h2>\n<p>En esta tesis se estudian teoricamente las propiedades de algunos tipos de estructuras semiconductoras de baja dimensionalidad. En la primera parte se estudian los tiempos de tunneling en estructuras de doble barrera.  para este fin se hace uso del metodo de estabilizacion.  asimismo, se estudia el efecto del perfil de dopaje en los tiempos de tunneling asi como fenomenos de acumulacion de carga. En la segunda parte se estudian las propiedades electronicas de pozos cuanticos crecidos sobre superficies vecinales. Concretamente, se estudian de forma exhaustiva las diversas causas que pueden estar en el origen del corrimiento a altas energias de las transiciones electronicas en los pozos cuanticos vicinales. En la tercera parte se estudian las propiedades estructurales de agregados de semiconductores sintetizados en las cavidades de la zeolita y. Para dicho estudio se hace uso de un metodo de \u00abtight-binding\u00bb no ortogonal y dinamica molecular, con el fin de obtener las estructuras de equilibrio de los agregados de semiconductores.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Propiedades electronicas de estructuras semiconductoras de baja dimensionalidad.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Propiedades electronicas de estructuras semiconductoras de baja dimensionalidad. <\/li>\n<li><strong>Autor:<\/strong>\u00a0  Porto Ortega Juan  Antonio <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Aut\u00f3noma de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1996<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>dehesa Moreno Sanchez<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Fernando Flores Sintas <\/li>\n<li>Ceferino Lopez Fernandez (vocal)<\/li>\n<li>Francisco Javier Meseguer Rico (vocal)<\/li>\n<li>Luis Martin Moreno (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Porto Ortega Juan Antonio En esta tesis se estudian teoricamente las propiedades de algunos tipos de estructuras [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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