{"id":132463,"date":"1996-01-01T00:00:00","date_gmt":"1996-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/fotoprocesamiento-ultravioleta-de-capas-finas-amorfas-de-oxido-de-silicio\/"},"modified":"1996-01-01T00:00:00","modified_gmt":"1996-01-01T00:00:00","slug":"fotoprocesamiento-ultravioleta-de-capas-finas-amorfas-de-oxido-de-silicio","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/ciencias-tecnologicas\/fotoprocesamiento-ultravioleta-de-capas-finas-amorfas-de-oxido-de-silicio\/","title":{"rendered":"Fotoprocesamiento ultravioleta de capas finas amorfas de oxido de silicio."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Eduardo Garcia Parada <\/strong><\/h2>\n<p>Este trabajo esta dedicado al estudio y desarrollo de procesos de baja temperatura inducidos mediante fotones ultravioleta para el deposito y para tratamientos post-deposito de capas finas amorfas de oxidos de silicio sobre semiconductores.Se presenta un estudio exhaustivo de las capas depositadas y tratadas. El alto control del proceso de deposito quimico fotoinducido a partir de fase vapor (foto-uv-cvd) permite el analisis de aspectos concretos como las formas de incorporacion de impurezas a las capas (especialmente hidrogeno), los cambios estructurales que se producen o un detallado analisis del proceso de envejecimiento de las capas. Por otro lado, se presenta el proceso de reconocido uv con unha novedosa lampara excimera de descarga silenciosa que emite fotones a una longitud de onda 193 nm. Este proceso se muestra altamente efectivo a temperatura ambiente y sin producir da\u00f1os en los dispositivos para inducir fotoliticamente procesos como la pasivacion, reoxidacion y relajacion de tension en las capas de oxido de silicio, con lo que se consigue una adecuacion a baja temperatura para su utilizacion en aplicaciones tecnologicas.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Fotoprocesamiento ultravioleta de capas finas amorfas de oxido de silicio.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Fotoprocesamiento ultravioleta de capas finas amorfas de oxido de silicio. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Eduardo Garcia Parada <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Vigo<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1996<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Leon Fong Betty M.<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Mar\u00eda no P\u00e9rez-mart\u00ednez Y P\u00e9rez-amor <\/li>\n<li>Tamas Szorenyi (vocal)<\/li>\n<li>Jean Flicstein (vocal)<\/li>\n<li>Elias Mu\u00f1oz Merino (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Eduardo Garcia Parada Este trabajo esta dedicado al estudio y desarrollo de procesos de baja temperatura inducidos [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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