{"id":13334,"date":"2018-03-09T08:59:35","date_gmt":"2018-03-09T08:59:35","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/contribucion-al-estudio-de-la-estructura-de-defectos-en-gan-heteroepitaxial-mediante-tecnicas-de-haces-de-electrones\/"},"modified":"2018-03-09T08:59:35","modified_gmt":"2018-03-09T08:59:35","slug":"contribucion-al-estudio-de-la-estructura-de-defectos-en-gan-heteroepitaxial-mediante-tecnicas-de-haces-de-electrones","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/contribucion-al-estudio-de-la-estructura-de-defectos-en-gan-heteroepitaxial-mediante-tecnicas-de-haces-de-electrones\/","title":{"rendered":"Contribuci\u00f3n al estudio de la estructura de defectos en gan heteroepitaxial mediante t\u00e9cnicas de haces de electrones"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Ana Mar\u00eda Sanchez Fuentes <\/strong><\/h2>\n<p>La importancia tecnol\u00f3gica adquirida por los materiales semiconductores iii-n ha originado una revoluci\u00f3n en el terrero de las aplicaciones electr\u00f3nicas y optoelectr\u00f3nicas, pudi\u00e9ndose convertir en los semiconductores del nuevo milenio.  este trabajo se ha centrado en la caracterizaci\u00f3n estructural de heteroepitaxias de gan obtenidas mediante epitaxia de haces moleculares sobre sustratos de si. En estas heteroepitaxias se produce un efecto sin\u00e9rgico gracias al potencial de estos semiconductores y la tecnolog\u00eda actual basada en si. Dentro del conocimiento de la estructura de defectos en esta pitaxias, se presentan un estudio m\u00e1s detallado de los denominados dominios de inversi\u00f3n, as\u00ed como sus fronteras asociadas. La incorporaci\u00f3n de si como dopante constituye una buena aproximaci\u00f3n para la disminuci\u00f3n de la densidad de dislocaciones propagadas en la epicapa, lo cual contribuir\u00e1 a mejorar las propiedades opto\/microelectr\u00f3nicas de dichos materiales. Adem\u00e1s se ha llevado a cabo la caracterizaci\u00f3n estructural de muestras de sic obtenidas mediante un proceso de carburizaci\u00f3n de si(111), para su posible incorporaci\u00f3n como capa amortiguadora en el crecimiento de gan sobre sustratos de si.  no obstante, dado que el crecimiento de materiales iii-n sobre sustratos de zafiro han proporcionado la obtenci\u00f3n del primer l\u00e1ser azul comercialmente disponible, actualmente se contin\u00faa trabajando en esta l\u00ednea. Por ello, en la presente tesis doctoral, tambi\u00e9n se desarrolla una aproximaci\u00f3n basada en la incorporaci\u00f3n de capas intermedias de ain crecidas a elevada temperatura mediante epitaxia de haces moleculares para la reducci\u00f3n de defectos en las epitaxias de gan crecidas sobre zafiro.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Contribuci\u00f3n al estudio de la estructura de defectos en gan heteroepitaxial mediante t\u00e9cnicas de haces de electrones<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Contribuci\u00f3n al estudio de la estructura de defectos en gan heteroepitaxial mediante t\u00e9cnicas de haces de electrones <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Ana Mar\u00eda Sanchez Fuentes <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 C\u00e1diz<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 19\/10\/2001<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Molina Rubio Sergio Ignacio<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: enrique Juan Herrera luque <\/li>\n<li>Fernando Calle g\u00f3mez (vocal)<\/li>\n<li>Juan Piqueras piqueras (vocal)<\/li>\n<li>pierre Ruterana (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Ana Mar\u00eda Sanchez Fuentes La importancia tecnol\u00f3gica adquirida por los materiales semiconductores iii-n ha originado una revoluci\u00f3n [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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