{"id":14701,"date":"2018-03-09T09:01:30","date_gmt":"2018-03-09T09:01:30","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/reorganizacion-atomica-y-configuraciones-espontaneas-de-baja-dimensionalidad-en-heteroestructuras-semiconductores-iii-v\/"},"modified":"2018-03-09T09:01:30","modified_gmt":"2018-03-09T09:01:30","slug":"reorganizacion-atomica-y-configuraciones-espontaneas-de-baja-dimensionalidad-en-heteroestructuras-semiconductores-iii-v","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/reorganizacion-atomica-y-configuraciones-espontaneas-de-baja-dimensionalidad-en-heteroestructuras-semiconductores-iii-v\/","title":{"rendered":"Reorganizaci\u00f3n at\u00f3mica y configuraciones espont\u00e1neas de baja dimensionalidad en heteroestructuras semiconductores iii-v"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Juan  Carlos Ferrer Millan <\/strong><\/h2>\n<p>El objetivo de la tesis es la utilizaci\u00f3n de los procesos at\u00f3micos que ocurren durante el crecimiento epitaxial, para la fabricaci\u00f3n de estructuras autoorganizadas de dimensionalidad reducida, as\u00ed como la caracterizaci\u00f3n de la morfolog\u00eda de tales estructuras y su correlaci\u00f3n con las propiedades \u00f3pticas y el\u00e9ctricas.  la tesis se divide, principalmente, en cuatro secciones:  * caracterizaci\u00f3n mediante tem de los defectos cristalinos de capas de insb depositadas sobre inp por almbe, y determinaci\u00f3n de los efectos de la introducci\u00f3n de capas intermedias crecidas por mbe. Correlaci\u00f3n con medidas de movilidad hall.  * caracterizaci\u00f3n mediante hrtem de pozos acu\u00e1nticos de gaas depositados mediante almbe en una matriz de gaas y cuantificaci\u00f3n de la interdifusi\u00f3n de los \u00e1tomos de as y p en las interficies del pozo acu\u00e1tico. Realizaci\u00f3n de un programa de medida de las distorsiones at\u00f3micas.  * an\u00e1lisis mediante tem y afm de los fen\u00f3menos de descomposici\u00f3n e inestabilidad superficial en capas de ingaas en inalas depositadas mediante mbe sobre inp. Determinaci\u00f3n de la influencia de los par\u00e1metros tecnol\u00f3gicos (temperatura de crecimiento, desadaptaci\u00f3n, desorientaci\u00f3n y espesor de las capas) sobre los fen\u00f3menos de descomposici\u00f3n e inestabilidad. Correlaci\u00f3n de los resultados obtenidos con las propiedades el\u00e9ctricas de estructuras hemt.  * caracterizaci\u00f3n mediante tem y afm  de la morfolog\u00eda de puntos cu\u00e1nticos de insb depositados mediante almbe sobre inp. Determinaci\u00f3n del modo de crecimiento, punto de nucleaci\u00f3n y coalescencia, tama\u00f1o, forma y facetado, estabilidad y estado de tensiones. Relaci\u00f3n con resultados obtenidos previamente mediante otras t\u00e9cnicas (espectroscop\u00eda raman, fotoluminiscencia y fotoreflectanica) que no han podido ser explicados.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Reorganizaci\u00f3n at\u00f3mica y configuraciones espont\u00e1neas de baja dimensionalidad en heteroestructuras semiconductores iii-v<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Reorganizaci\u00f3n at\u00f3mica y configuraciones espont\u00e1neas de baja dimensionalidad en heteroestructuras semiconductores iii-v <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Juan  Carlos Ferrer Millan <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Barcelona<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 18\/12\/2001<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Francesca Peiro Martinez<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: albert Cornet i calveras <\/li>\n<li>zuzanna Liliental -weber (vocal)<\/li>\n<li>gaspar Armelles reig (vocal)<\/li>\n<li>peter Werner (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Juan Carlos Ferrer Millan El objetivo de la tesis es la utilizaci\u00f3n de los procesos at\u00f3micos que [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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