{"id":18250,"date":"2002-09-07T00:00:00","date_gmt":"2002-09-07T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/caracterizacion-optica-de-estructuras-cuanticas-semiconducturas-lngap-gaas-e-lnas-gaas-para-zonas-activas-de-diodos-laser\/"},"modified":"2002-09-07T00:00:00","modified_gmt":"2002-09-07T00:00:00","slug":"caracterizacion-optica-de-estructuras-cuanticas-semiconducturas-lngap-gaas-e-lnas-gaas-para-zonas-activas-de-diodos-laser","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/caracterizacion-optica-de-estructuras-cuanticas-semiconducturas-lngap-gaas-e-lnas-gaas-para-zonas-activas-de-diodos-laser\/","title":{"rendered":"Caracterizaci\u00f3n \u00f3ptica de estructuras cuanticas semiconducturas lngap\/gaas e lnas\/gaas para zonas activas de diodos laser"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Carlos Rudamas Flores <\/strong><\/h2>\n<p>En este trabajo de investigaci\u00f3n se recoge el estudio de las propiedades \u00f3pticas de pozos cuanticos ingap\/gaas y de cajas cuanticas inas\/gaas, a trav\u00e9s de resultados experimentales mediante t\u00e9cnicas de fotoluminiscencia resonante y no resonante, fotolmuniscencia de excitaci\u00f3n y fotolmuniscencia resuelta en tiempo. Estos resultados, apoyados por varios modelos te\u00f3ricos, han permitido obtener conclusiones importantes sobre las transiciones \u00f3pticas fundamentales, interacci\u00f3n exciton-fonon, desalineamiento de bandas y localizaci\u00f3n excitonica en defectos de la aleaci\u00f3n en el sistema ingap\/gaas, as\u00ed como en las propiedades \u00f3pticas de conjunto y relajaci\u00f3n de energ\u00eda en el sistema inas\/gaas.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Caracterizaci\u00f3n \u00f3ptica de estructuras cuanticas semiconducturas lngap\/gaas e lnas\/gaas para zonas activas de diodos laser<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Caracterizaci\u00f3n \u00f3ptica de estructuras cuanticas semiconducturas lngap\/gaas e lnas\/gaas para zonas activas de diodos laser <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Carlos Rudamas Flores <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Universitat de val\u00e9ncia (estudi general)<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 09\/07\/2002<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Juan  Ignacio Martinez Pastor<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: alfredo Segura Garc\u00eda del r\u00edo <\/li>\n<li>Luis V\u00ed\u00f1a liste (vocal)<\/li>\n<li>Luisa Gonz\u00e1lez sotos (vocal)<\/li>\n<li>philippe Rovssignol (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Carlos Rudamas Flores En este trabajo de investigaci\u00f3n se recoge el estudio de las propiedades \u00f3pticas de [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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