{"id":33895,"date":"1998-01-01T00:00:00","date_gmt":"1998-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/estudio-del-ruido-de-baja-frecuencia-en-transistores-de-efecto-campo\/"},"modified":"1998-01-01T00:00:00","modified_gmt":"1998-01-01T00:00:00","slug":"estudio-del-ruido-de-baja-frecuencia-en-transistores-de-efecto-campo","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/estudio-del-ruido-de-baja-frecuencia-en-transistores-de-efecto-campo\/","title":{"rendered":"Estudio del ruido de baja frecuencia en transistores de efecto campo."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Andres Godoy Medina <\/strong><\/h2>\n<p>Este trabajo se centra en el ruido de baja frecuencia presente en los transistores de efecto campo. Para los jfets se analizan las uniones puerta-canal polarizadas en inverso, resolviendo en ellas de modo num\u00e9rico la ecuaci\u00f3n de poisson. Los resultados nos permiten calcular la densidad espectral de ruido originada por diferentes centros investigando la influencia de su posici\u00f3n energ\u00e9tica y de los diferentes perfiles de impurezas poco profundas. Son considerados dispositivos construidos con diferentes materiales semiconductores, tales como si o sic.  en los mosfets se estudia el llenado y vaciado de los estados ligados pr\u00f3ximos a la interfase si\/sio2, su influencia en la corriente del dispositivo debido a la variaci\u00f3n del n\u00famero de portadores libres y a la variaci\u00f3n de la movilidad provocada por el incremento de la dispersi\u00f3n culombiana. Adem\u00e1s se analizan las dependencias de los tiempos de captura y emisi\u00f3n de los electrones con la temperatura y la tensi\u00f3n de puerta aplicada. Para todas estas estructuras se investigan las consecuencias de su posible exposici\u00f3n a radicaci\u00f3n.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Estudio del ruido de baja frecuencia en transistores de efecto campo.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Estudio del ruido de baja frecuencia en transistores de efecto campo. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Andres Godoy Medina <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Granada<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1998<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Jimenez Tejada Juan  Antonio<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal:  Carceller Beltran Juan  Enrique <\/li>\n<li>Daniel Pardo Collantes (vocal)<\/li>\n<li>Luis Bailon Vega (vocal)<\/li>\n<li>Luca Varani (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Andres Godoy Medina Este trabajo se centra en el ruido de baja frecuencia presente en los transistores [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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