{"id":3474,"date":"1994-01-01T00:00:00","date_gmt":"1994-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/1994\/01\/01\/crecimiento-epitaxial-de-estructuras-semiconductoras-sobre-sustratos-no-planos-mediante-mbe-y-almbe\/"},"modified":"1994-01-01T00:00:00","modified_gmt":"1994-01-01T00:00:00","slug":"crecimiento-epitaxial-de-estructuras-semiconductoras-sobre-sustratos-no-planos-mediante-mbe-y-almbe","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/crecimiento-epitaxial-de-estructuras-semiconductoras-sobre-sustratos-no-planos-mediante-mbe-y-almbe\/","title":{"rendered":"Crecimiento epitaxial de estructuras semiconductoras sobre sustratos no planos mediante mbe y almbe."},"content":{"rendered":"<h2>Tesis doctoral de <strong>  Dominguez Lorenzo Pablo Socrates <\/strong><\/h2>\n<p>Se exponen las peculiaridades del crecimiento epitaxial de compuestos iii-v sobre mesetas o canales, haciendo enfasis en la migracion superficial del cation a resultas del gradiente de potencial quimico entre facetas vecinas.  el desarrollo de un sencillo modelo matematico permite dise\u00f1ar un programa de simulacion del crecimiento, que se emplea como herramienta de analisis de los experimentos de deposito epitaxial. Ajustando la salida del programa a las imagenes de microscopia electronica de las muestras es posible determinar parametros relativos a la cinetica del crecimiento (mbe o almbe) de gaas, alas o imas. En particular, se demuestra que la tecnica almbe incentiva la migracion superficial del cation y reduce las diferencias en reactividad quimica entre facetas con diferentes orientaciones cristalgraficas, en comparacion con la tecnica mbe.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Crecimiento epitaxial de estructuras semiconductoras sobre sustratos no planos mediante mbe y almbe.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Crecimiento epitaxial de estructuras semiconductoras sobre sustratos no planos mediante mbe y almbe. <\/li>\n<li><strong>Autor:<\/strong>\u00a0  Dominguez Lorenzo Pablo Socrates <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Aut\u00f3noma de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1994<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Miguel Anton Jos\u00e9 Luis De<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Juan Piqueras Piqueras <\/li>\n<li>Jos\u00e9 Manuel Calleja Pardo (vocal)<\/li>\n<li>Enrique Calleja Pardo (vocal)<\/li>\n<li>  (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Dominguez Lorenzo Pablo Socrates Se exponen las peculiaridades del crecimiento epitaxial de compuestos iii-v sobre mesetas o [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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