{"id":35921,"date":"1998-01-01T00:00:00","date_gmt":"1998-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/caracterizacion-del-danado-electrico-residual-tras-procesos-de-implantacion-ionica-y-rta-en-silicio-y-fosfuro-de-indio\/"},"modified":"1998-01-01T00:00:00","modified_gmt":"1998-01-01T00:00:00","slug":"caracterizacion-del-danado-electrico-residual-tras-procesos-de-implantacion-ionica-y-rta-en-silicio-y-fosfuro-de-indio","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/caracterizacion-del-danado-electrico-residual-tras-procesos-de-implantacion-ionica-y-rta-en-silicio-y-fosfuro-de-indio\/","title":{"rendered":"Caracterizacion del da\u00f1ado electrico residual tras procesos de implantacion ionica y rta en silicio y fosfuro de indio."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Ruth Pinacho Gomez <\/strong><\/h2>\n<p>El objetivo del presente trabajo ha sido estudiar el da\u00f1ado el\u00e9ctricamente activo que permanece en el material implantado despu\u00e9s del tratamiento t\u00e9rmico posterior a la implantaci\u00f3n i\u00f3nica, as\u00ed como su dependencia con determinadas variables tecnol\u00f3gicas. En el primer y segundo cap\u00edtulos se hace una introducci\u00f3n a una implantaci\u00f3n i\u00f3nica y una descripci\u00f3n de las t\u00e9cnicas de caracterizaci\u00f3n el\u00e9ctrica utilizadas, dando especial importancia a la t\u00e9cnica de transitorios de capacidad-tensi\u00f3n (cvtt), desarrollada para poder estudiar los perfiles de centros profundos cuando no son uniformes. Dos han sido los materiales bajo estudio: en el cap\u00edtulo tres se muestran los resultados obtenidos sobre silicio implantado con boro y sometido a un rta a diferentes temperaturas y tiempos, mientras que en el cap\u00edtulo cuatro, se estudian los centros profundos producidos durante la implantaci\u00f3n de diferentes materiales sobre fosfuro de indio. Por \u00faltimo, en el cap\u00edtulo cinco, se resumen las principales conclusiones derivadas de los trabajos expuestos en los cap\u00edtulos anteriores.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Caracterizacion del da\u00f1ado electrico residual tras procesos de implantacion ionica y rta en silicio y fosfuro de indio.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Caracterizacion del da\u00f1ado electrico residual tras procesos de implantacion ionica y rta en silicio y fosfuro de indio. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Ruth Pinacho Gomez <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Valladolid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1998<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Salvador Due\u00f1as Carazo<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Pedro Cartujo Est\u00e9banez <\/li>\n<li>Daniel Pardo Collantes (vocal)<\/li>\n<li>Juan Barbolla Sanchez (vocal)<\/li>\n<li> Carceller Beltran Juan  Enrique (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Ruth Pinacho Gomez El objetivo del presente trabajo ha sido estudiar el da\u00f1ado el\u00e9ctricamente activo que permanece [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[332,2675,199,29653,3706,12451],"tags":[3709,3711,9633,22246,95493,95494],"class_list":["post-35921","post","type-post","status-publish","format-standard","hentry","category-ciencias-tecnologicas","category-electronica","category-fisica","category-tecnologia-del-silicio","category-tecnologia-electronica","category-valladolid","tag-carceller-beltran-juan-enrique","tag-daniel-pardo-collantes","tag-juan-barbolla-sanchez","tag-pedro-cartujo-estebanez","tag-ruth-pinacho-gomez","tag-salvador-duenas-carazo"],"_links":{"self":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/35921","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/comments?post=35921"}],"version-history":[{"count":0,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/35921\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/media?parent=35921"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/categories?post=35921"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/tags?post=35921"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}