{"id":3801,"date":"1994-01-01T00:00:00","date_gmt":"1994-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/1994\/01\/01\/contribucion-al-estudio-de-los-transistores-bipolares-de-heterounion\/"},"modified":"1994-01-01T00:00:00","modified_gmt":"1994-01-01T00:00:00","slug":"contribucion-al-estudio-de-los-transistores-bipolares-de-heterounion","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/ciencias-tecnologicas\/contribucion-al-estudio-de-los-transistores-bipolares-de-heterounion\/","title":{"rendered":"Contribucion al estudio de los transistores bipolares de heterounion"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Juan  Miguel Lopez Gonzalez <\/strong><\/h2>\n<p>La tesis doctoral analiza el comportamiento electrico de los transistores bipolares de heterounion mas utilizados:  hbt-si\/sige, hbt-algaas\/gaas y hbt-inp\/ingaas. En el trabajo se realiza un simulador numerico de transistores bipolares de heterounion, que permite estudiar transistores bipolares de heterounion abruptos, donde las barreras de energia en la interfaz entre las regiones de base y emisor tienen un papel fundamental en el transporte de portadores. Los simuladores numericos actuales no pueden analizar este tipo de dispositivos, pues en la region de interfaz el movimiento de los portadores debe explicarse, en muchas ocasiones, mediante la emision termoionica y el efecto tunel. El simulador numerico realizado permite explicar correctamente los resultados experimentales observados en los transistores bipolares de homounion y heterounion. El simulador se aplica al analisis de los efectos del estrechamiento de la banda prohibida en transistores hbt rapidos, con regiones de base muy dopadas. Se comprueba un modelo para el estrechamiento de la banda prohibida que sirve para analizar transistores hbt de diferentes materiales a partir del conocimiento de sus caracteristicas fisicas basicas.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Contribucion al estudio de los transistores bipolares de heterounion<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Contribucion al estudio de los transistores bipolares de heterounion <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Juan  Miguel Lopez Gonzalez <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Polit\u00e9cnica de catalunya<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1994<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Luis Prat Vi\u00f1as<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Luis Casta\u00f1er Mu\u00f1oz <\/li>\n<li>Jos\u00e9 Mar\u00eda Ruiz Perez (vocal)<\/li>\n<li>Eugenio Garcia Moreno (vocal)<\/li>\n<li>Ignacio Izpura Torres (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Juan Miguel Lopez Gonzalez La tesis doctoral analiza el comportamiento electrico de los transistores bipolares de heterounion 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