{"id":41948,"date":"1999-01-01T00:00:00","date_gmt":"1999-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/contribucion-al-estudio-de-defectos-en-capas-epitaxiales-de-gan-aplicaciones-a-dispositivos-optoelectronicos\/"},"modified":"1999-01-01T00:00:00","modified_gmt":"1999-01-01T00:00:00","slug":"contribucion-al-estudio-de-defectos-en-capas-epitaxiales-de-gan-aplicaciones-a-dispositivos-optoelectronicos","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/contribucion-al-estudio-de-defectos-en-capas-epitaxiales-de-gan-aplicaciones-a-dispositivos-optoelectronicos\/","title":{"rendered":"Contribucion al estudio de defectos en capas epitaxiales de gan. aplicaciones a dispositivos optoelectronicos."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Fernando Jose Sanchez  Sanz <\/strong><\/h2>\n<p>Esta tesis doctoral se ha dedicado al estudio y caracterizaci\u00f3n de capas epitaxiales de gan. Este material es un semiconductor de gap ancho (3,4 ev) que ha despertado un gran inter\u00e9s gracias a sus propiedades que posibilitan su aplicaci\u00f3n inmediata a la fabricaci\u00f3n de emisores en el azul y uv, detectores de uv y transistores de potencia. Se han estudiado capas crecidas sobre sustratos de zafiro y silicio (111) por dos t\u00e9cnicas diferentes, mbe y movpe. las t\u00e9cnicas empleadas han sido fotoluminiscencia, efecto hall y fotocapacidad. Mediante ellas se han caracterizado defectos en material no dopado y ha sido posible la determinaci\u00f3n de la energ\u00eda de activaci\u00f3n de varios dopantes como el si (donante), el mg y el be (aceptores). Finalmente se ha realizado un estudio de la influencia de estos defectos y dopantes sobre las prestaciones de dos dispositivos, un detector de uv fotoconductor y un emisor de radiaci\u00f3n azul (diodo electroluminiscente).<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Contribucion al estudio de defectos en capas epitaxiales de gan. aplicaciones a dispositivos optoelectronicos.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Contribucion al estudio de defectos en capas epitaxiales de gan. aplicaciones a dispositivos optoelectronicos. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Fernando Jose Sanchez  Sanz <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Polit\u00e9cnica de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1999<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Enrique Calleja Pardo<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: elias Mu\u00f1oz merino <\/li>\n<li>martin Spaeth johann (vocal)<\/li>\n<li>Francisco Javier Piqueras de noriega (vocal)<\/li>\n<li>  (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Fernando Jose Sanchez Sanz Esta tesis doctoral se ha dedicado al estudio y caracterizaci\u00f3n de capas epitaxiales [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[332,3705,199,1008,16008,1007,3706],"tags":[14753,5384,105887,5193,105888],"class_list":["post-41948","post","type-post","status-publish","format-standard","hentry","category-ciencias-tecnologicas","category-dispositivos-semiconductores","category-fisica","category-fisica-del-estado-solido","category-politecnica-de-madrid","category-propiedades-magneticas-de-los-solidos","category-tecnologia-electronica","tag-elias-munoz-merino","tag-enrique-calleja-pardo","tag-fernando-jose-sanchez-sanz","tag-francisco-javier-piqueras-de-noriega","tag-martin-spaeth-johann"],"_links":{"self":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/41948","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/comments?post=41948"}],"version-history":[{"count":0,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/41948\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/media?parent=41948"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/categories?post=41948"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/tags?post=41948"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}