{"id":5128,"date":"1995-01-01T00:00:00","date_gmt":"1995-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/1995\/01\/01\/estudio-por-microscopia-electronica-de-transmision-del-sistema-heteroepitaxial-gaas-sobre-si001-efecto-del-dopado-y-la-temperatura-sobre-la-estructura-de-defectos\/"},"modified":"1995-01-01T00:00:00","modified_gmt":"1995-01-01T00:00:00","slug":"estudio-por-microscopia-electronica-de-transmision-del-sistema-heteroepitaxial-gaas-sobre-si001-efecto-del-dopado-y-la-temperatura-sobre-la-estructura-de-defectos","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/estudio-por-microscopia-electronica-de-transmision-del-sistema-heteroepitaxial-gaas-sobre-si001-efecto-del-dopado-y-la-temperatura-sobre-la-estructura-de-defectos\/","title":{"rendered":"Estudio por microscopia electronica de transmision del sistema heteroepitaxial gaas sobre si(001): efecto del dopado y la temperatura sobre la estructura de defectos."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Guillermo Aragon Herranz <\/strong><\/h2>\n<p>En la presente memoria de tesis doctoral, se estudia por microscopia electronica de transmision la estructura de defectos en capas epitaxiales de gaas crecidas por atomic layer molecular beam epitaxy (almbe) a 350 grados c.  sobre sustratos de si(001). El efecto del dopado se investiga en capas epitaxiales de gaas dopadas tipo n y tipo p y el de la temperatura en capas epitaxiales de gaas crecidas con tratamientos termicos. Se encuentra que la estructura de defectos caracteristica en capas epitaxiales de gaas consiste en defectos planares (fallos de apilamiento y micromaclas) que presentan una distribucion asimetrica. Esta estructura de defectos se puede explicar desarrollando un modelo que tiene en cuenta la secuencia y las movilidades de las dislocaciones parciales de polaridad alfa y beta en funcion del signo de la tension reticular. Asi, los defectos planares provienen de la disociacion de dislocaciones threading beta y dislocaciones threading alfa para capas epitaxiales de gaas dopadas tipo n y dopadas tipo p, respectivamente. Por el contrario, la disociacion de dislocaciones threading alfa y beta no ocurre para capas epitaxiales de gaas crecidas con tratamientos termicos. Del estudio llevado a cabo se encuentra que la diferencia entre las movilidades de las dislocaciones parciales es un factor que esta relacionado con la aparicion de los defectos planares y llega a ser mas importante cuando la temperatura de crecimiento disminuye.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Estudio por microscopia electronica de transmision del sistema heteroepitaxial gaas sobre si(001): efecto del dopado y la temperatura sobre la estructura de defectos.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Estudio por microscopia electronica de transmision del sistema heteroepitaxial gaas sobre si(001): efecto del dopado y la temperatura sobre la estructura de defectos. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Guillermo Aragon Herranz <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 C\u00e1diz<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1995<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Rafael Garcia Roja<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Francisco Javier Piqueras De Noriega <\/li>\n<li>Nicol\u00e1s De La Rosa Fox (vocal)<\/li>\n<li>Luisa Gonz\u00e1lez Sotos (vocal)<\/li>\n<li> San Juan  Nu\u00f1ez Jos\u00e9 Mar\u00eda (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Guillermo Aragon Herranz En la presente memoria de tesis doctoral, se estudia por microscopia electronica de transmision [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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