{"id":5883,"date":"1995-01-01T00:00:00","date_gmt":"1995-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/1995\/01\/01\/crecimiento-por-epitaxia-de-haces-quimicos-cbe-de-gaas-a-partir-de-tbas-y-de-tega\/"},"modified":"1995-01-01T00:00:00","modified_gmt":"1995-01-01T00:00:00","slug":"crecimiento-por-epitaxia-de-haces-quimicos-cbe-de-gaas-a-partir-de-tbas-y-de-tega","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/crecimiento-por-epitaxia-de-haces-quimicos-cbe-de-gaas-a-partir-de-tbas-y-de-tega\/","title":{"rendered":"Crecimiento por epitaxia de haces quimicos (cbe) de gaas a partir de tbas y de tega."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Mohamed Ait Lhouss <\/strong><\/h2>\n<p>Se ha desarrollado y puesto a punto un sistema de crecimiento epitaxial de capas semiconductoras en condiciones de ultra alto vacio a partir de organometalicos (cbe). Se han estudiado las condiciones y productos de descomposicion del tbas en una celula de inyeccion de nitruro de boro, encontrandose las mejores condiciones para la utilizacion de tbas como fuente de as.  se han crecido capas de asga a partir de flujos continuos de tega y tbas y se ha estudiado la calidad de estas capas en funcion de las condiciones de crecimiento (temperatura del sustrato, velocidad de crecimiento, relacion de flujos y temperatura de descomposicion de tba). El estudio de la calidad de las capas ha incluido caracterizacion electrica, optica y morfologica.  se han crecido asi mismo capas de asga a partir de flujos alternados de tbas y tega.  en estas condiciones se han obtenido crecimientos para temperaturas del sustrato por encima de 380 grados c.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Crecimiento por epitaxia de haces quimicos (cbe) de gaas a partir de tbas y de tega.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Crecimiento por epitaxia de haces quimicos (cbe) de gaas a partir de tbas y de tega. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Mohamed Ait Lhouss <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Complutense de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1995<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li> Casta\u00f1o Palaz\u00f3n Jos\u00e9 Luis<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Juan  Manuel Rojo  Alaminos <\/li>\n<li>Juan Piqueras Piqueras (vocal)<\/li>\n<li> Miguel Y Anton Jos\u00e9 Luis (vocal)<\/li>\n<li>  (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Mohamed Ait Lhouss Se ha desarrollado y puesto a punto un sistema de crecimiento epitaxial de capas [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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