{"id":62809,"date":"2008-08-02T00:00:00","date_gmt":"2008-08-02T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/design-and-optimization-of-rf-power-ldmos-transistors-for-base-station-applications\/"},"modified":"2008-08-02T00:00:00","modified_gmt":"2008-08-02T00:00:00","slug":"design-and-optimization-of-rf-power-ldmos-transistors-for-base-station-applications","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/politecnica-de-catalunya\/design-and-optimization-of-rf-power-ldmos-transistors-for-base-station-applications\/","title":{"rendered":"Design and optimization of rf power ldmos transistors for base station applications"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Ignacio Cortes Mayol <\/strong><\/h2>\n<p>Introduccion- este trabajo est\u00e1 enmarcado en el dise\u00f1o e implementaci\u00f3n de transistores ldmos de potencia para aplicaciones de radio frecuencia (rf), en el cual se define y ajusta los procesos tecnol\u00f3gicos para la fabricaci\u00f3n de transistores ldmos de rf en la sala blanca del imb-cnm. Dichos dispositivos, destinados a aplicaciones de estaciones base soportan voltajes de ruptura de hasta 100 v y se han dise\u00f1ado sobre substratos  bulk y thick soi. Memoria- la realizaci\u00f3n del documento de tesis incluye los siguientes aspectos: 1. Definici\u00f3n y ajuste del proceso tecnol\u00f3gico. 2.Dise\u00f1o y fabricaci\u00f3n de dispositivos ldmos. 3. An\u00e1lisis e investigaci\u00f3n de las medias de rf. 4. An\u00e1lisis de nuevas estructuras ldmos para rf mediante simuladores de elementos finitos. el trabajo realizado se ha centrado en el estudio te\u00f3rico de transistores ldmos de potencia para aplicaciones de rf en tecnolog\u00eda bulk y soi, as\u00ed como en la determinaci\u00f3n de la influencia de los par\u00e1metros geom\u00e9tricos y tecnol\u00f3gicos en las caracter\u00edsticas el\u00e9ctricas de los transistores. En concreto se ha estudiado en detalle la respuesta en frecuencia, las capacidades par\u00e1sitas, la capacidad en tensi\u00f3n, la degradaci\u00f3n por portadores calientes y las figuras de m\u00e9rito b\u00e1sicas en rf. Por otra parte, se han desarrollado y simulado los procesos de fabricaci\u00f3n de estos transistores en las diferentes tecnolog\u00edas. Se han fabricado transistores ldmos en tecnolog\u00eda bulk y thick soi con configuraci\u00f3n de pads gsg (ground signal ground) para poder realizar medidas con sondas est\u00e1ndar de rf y extraer los par\u00e1metros s en funci\u00f3n de la polarizaci\u00f3n del transistor. Adem\u00e1s, se han a\u00f1adido transistores con pads m\u00e1s indicados para medici\u00f3n en dc. 1. Respecto al primer punto, se han realizado m\u00faltiples simulaciones con herramientas tcad (silvaco y sentaurus) para la definici\u00f3n y ajuste de todos y cada uno de los pasos del proceso tecnol\u00f3gico para la fabricaci\u00f3n de transistores ldmos de potenci<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Design and optimization of rf power ldmos transistors for base station applications<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Design and optimization of rf power ldmos transistors for base station applications <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Ignacio Cortes Mayol <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Polit\u00e9cnica de catalunya<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 08\/02\/2008<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>David Flores<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Jose Millan <\/li>\n<li>Florin Udrea (vocal)<\/li>\n<li>Peter Moens (vocal)<\/li>\n<li>Antonio Lazaro (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Ignacio Cortes Mayol Introduccion- este trabajo est\u00e1 enmarcado en el dise\u00f1o e implementaci\u00f3n de transistores ldmos de [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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