{"id":80635,"date":"2018-03-10T00:04:23","date_gmt":"2018-03-10T00:04:23","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/degradacio-de-transistors-nmos-per-efecte-de-portadors-calents\/"},"modified":"2018-03-10T00:04:23","modified_gmt":"2018-03-10T00:04:23","slug":"degradacio-de-transistors-nmos-per-efecte-de-portadors-calents","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/degradacio-de-transistors-nmos-per-efecte-de-portadors-calents\/","title":{"rendered":"Degradaci\u00f3 de transistors nmos per efecte de portadors calents."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Joan Marc Raf\u00ed Tatjer <\/strong><\/h2>\n<p>El objetivo de este trabajo es el estudio de la degradaci\u00f3n por efecto de portadores calientes experimentada por transistores nmos de diferentes tecnolog\u00edas cmos micr\u00f3nicas y submicr\u00f3nicas.  en primer lugar, y utilizando resultados de simulaci\u00f3n tecnol\u00f3gica y el\u00e9ctrica de los dispositivos, se realiza una aproximaci\u00f3n a los principales fen\u00f3menos relacionados con la generaci\u00f3n de portadores calientes, las estructuras de drenador gradual, la degradaci\u00f3n de los transistores nmos y las principales t\u00e9cnicas que permiten la caracterizaci\u00f3n de \u00e9sta.  en segundo lugar, se procede al estudio del envejecimiento registrado por los transistores nmos micr\u00f3nicos, analizando y discutiendo los diferentes mecanismos que conducen a la degradaci\u00f3n de los dispositivos bajo las diversas condiciones de estr\u00e9s el\u00e9ctrico.  en part\u00edcular, se analiza en profundidad un modo de degradaci\u00f3n caracterizado por un inusual aumento de la trasnconductancia de los dispositivos.  en tercer punto, se analiza y discute la degradaci\u00f3n registrada por transistores nmos de arquitecturas ldd i latid de un amplio rango de longitudes aubmicr\u00f3nicas. Dentro de este apartado, se estudian en primer lugar los efectos de la degradaci\u00f3n bajo la condici\u00f3n de m\u00e1xima corriente de substrato, determinando y extrapolando los tiempos de vida asociados a las diferentes arquitecturas y longitudes de transistor.  en segundo lugar, y haciendo uso de la t\u00e9cnica de charge pumping para la determianci\u00f3n de la densidad media de estados de interficie a lo largo del canal, se discuten los mecasnimos de degradaci\u00f3n bajo los diferentes reg\u00edmenes de puerta.  finalmente, se demuestra que la ejecuci\u00f3n de cortas etapas de inyecci\u00f3n de electrones y huecos permite revelar la presencia de una cantidad significatiava de da\u00f1o generado durante laos reg\u00edmenes a tensiones de puerta m\u00e1s bajas, el cual permanec\u00eda oculto a una simple caracterizaci\u00f3n i-v. Por otro lado, la ejecuci\u00f3n<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Degradaci\u00f3 de transistors nmos per efecte de portadors calents.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Degradaci\u00f3 de transistors nmos per efecte de portadors calents. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Joan Marc Raf\u00ed Tatjer <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Aut\u00f3noma de barcelona<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 17\/09\/1999<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Francesca Campabadal Segura<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: pedro Cartujo est\u00e9banez <\/li>\n<li>joan ramon Morante lleonart (vocal)<\/li>\n<li>Francisco Serra mestres (vocal)<\/li>\n<li>josep Calderer cardona (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Joan Marc Raf\u00ed Tatjer El objetivo de este trabajo es el estudio de la degradaci\u00f3n por efecto [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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