{"id":85928,"date":"2018-03-10T00:10:25","date_gmt":"2018-03-10T00:10:25","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/fabricacion-caracterizacion-y-modelado-de-transitores-de-heterounion-de-efecto-campo-basados-en-algan-gan\/"},"modified":"2018-03-10T00:10:25","modified_gmt":"2018-03-10T00:10:25","slug":"fabricacion-caracterizacion-y-modelado-de-transitores-de-heterounion-de-efecto-campo-basados-en-algan-gan","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/fabricacion-caracterizacion-y-modelado-de-transitores-de-heterounion-de-efecto-campo-basados-en-algan-gan\/","title":{"rendered":"Fabricaci\u00f3n, caracterizaci\u00f3n y modelado de transitores de heterouni\u00f3n de efecto campo basados en algan\/gan"},"content":{"rendered":"<h2>Tesis doctoral de <strong> Jos\u00e9 Antonio Garrido Ariza <\/strong><\/h2>\n<p>Los transistores de heterouni\u00f3n (hfet) basados en el sistema algan\/gan presentan unas caracter\u00edsticas muy prometedoras para su utilizaci\u00f3n en aplicaciones de alta potencia (1w-100w) en el rango de las microondas. sin embargo aun quedan muchos aspectos, tanto tecnol\u00f3gicos como de caracterizaci\u00f3n b\u00e1sica (campos de polarizaci\u00f3n, ruido de baja frecuencia, etc.), Que no han sido estudiados en profundidad. En este trabajo se investigan algunos de estos apsectos.  en primer lugar se ha desarrollado una herramienta de simulaci\u00f3n  autoconsistente que permite analiar la influencia de los par\u00e1metros de dise\u00f1o de las heterouniones, tales como espesores y composiciones de las capas utilizadas, niveles de dopaje, etc. Una de las caracter\u00edsticas m\u00e1s importantes de las heterouniones basadas en algan\/gan es la presencia de unos campos de polarizaci\u00f3n (piezoel\u00e9ctrica y espont\u00e1nea) muy intensos, que hacen que la carga acumulada tenga una magnitud del orden de 10 13 cm-2. Estos campos de polarizaci\u00f3n se han incluido en los c\u00e1lculos autoconsistentes de la herramienta de simulaci\u00f3n. Sin embargo, se ha comprobado que la carga que resulta de utilizar los valores te\u00f3ricos de los campos de polarizaci\u00f3n es mucho menor que la carga real medida. En este sentido, y mediante el an\u00e1lisis de estructuras hfet y de pozos cu\u00e1nticos, se ha deducido una relaci\u00f3n experimental entre los campos de polarizaci\u00f3n y la composici\u00f3n de al.  se ha desarrollado una tecnolog\u00eda b\u00e1sica de fabricaci\u00f3n de transistores hfet de algan\/gan. Para ello se han estudiado los procesos realcionados con los contactos \u00f3hmicos, los contactos schottky y los ataques secos (rie) para el aislamiento de los dipsositivos (ataque mesa).  utilizando la tecnolog\u00eda de fabricaci\u00f3n previamente desarrolalda se han fabricado transistores y estructuras  de barra hall con puerta sobre muestras de algan\/gan. En las estructuras de barra hall se han realizado estudios de transporte a bajos<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Fabricaci\u00f3n, caracterizaci\u00f3n y modelado de transitores de heterouni\u00f3n de efecto campo basados en algan\/gan<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Fabricaci\u00f3n, caracterizaci\u00f3n y modelado de transitores de heterouni\u00f3n de efecto campo basados en algan\/gan <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Jos\u00e9 Antonio Garrido Ariza <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Polit\u00e9cnica de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 13\/07\/2000<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>El\u00edas Mu\u00f1oz Merino<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal:  Izpura torres Jos\u00e9 ignacio <\/li>\n<li>Fernando Gonz\u00e1lez san (vocal)<\/li>\n<li> \u00e1lamo Jes\u00fas a. del (vocal)<\/li>\n<li>Jos\u00e9 Sanchez-dehesa moreno-cid (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Jos\u00e9 Antonio Garrido Ariza Los transistores de heterouni\u00f3n (hfet) basados en el sistema algan\/gan presentan unas caracter\u00edsticas [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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