{"id":86487,"date":"2018-03-10T00:11:07","date_gmt":"2018-03-10T00:11:07","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/simulacion-y-modelado-de-transistores-mos-de-doble-puerta\/"},"modified":"2018-03-10T00:11:07","modified_gmt":"2018-03-10T00:11:07","slug":"simulacion-y-modelado-de-transistores-mos-de-doble-puerta","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/fisica\/simulacion-y-modelado-de-transistores-mos-de-doble-puerta\/","title":{"rendered":"Simulacion y modelado de transistores mos de doble puerta."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Pedro Cartujo Cassinello <\/strong><\/h2>\n<p>En este trabajo se hace un estudio del transistor mos de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor mos soi de puerta simple. Para ello se ha analizado una secci\u00f3n transversal de un transistor mos de doble puerta de canal n, con el fin de examinar detalladamente las peculiaridades de la distribuci\u00f3n de electrones con una amplia variedad de valores de todos los par\u00e1mentros tecnol\u00f3gicos y condiciones de operaci\u00f3n, y se ha estudiado las propiedades de trasnporte en el canal. Para las obtenci\u00f3n de la distribuci\u00f3n  de electrones, se ha resuelto autoconsistentemente las ecuaciones de poisson y schr\u00ed\u00b6dinger en la estructura, dentro de las aproximaciones de hartree y de masa efectiva. Para el estudio de las propeidades de transporte se calcular\u00e1 la movilidad de los electrones mediante el m\u00e9todo de monte carlo. los resultados de estas simulaciones se utilizar\u00e1n tambi\u00e9n para verificar los efectos de los diferents par\u00e1metros tecnol\u00f3gicos en par\u00e1metros utilizados en modelos anal\u00edticos para la simulaci\u00f3n de circuitos.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Simulacion y modelado de transistores mos de doble puerta.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Simulacion y modelado de transistores mos de doble puerta. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Pedro Cartujo Cassinello <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Granada<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 22\/09\/2000<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Juan  Antonio L\u00f3pez Villanueva<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal:  Carceller beltran Juan  enrique <\/li>\n<li>Juan Barbolla sanchez (vocal)<\/li>\n<li>Francisco Serra mestres (vocal)<\/li>\n<li>daniel Pardo collantes (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Pedro Cartujo Cassinello En este trabajo se hace un estudio del transistor mos de doble puerta analizando [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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