{"id":8886,"date":"1995-01-01T00:00:00","date_gmt":"1995-01-01T00:00:00","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/1995\/01\/01\/epitaxia-de-haces-moleculares-de-compuestos-de-antimonio-sobre-gaas-001-aplicacion-al-desarrollo-de-detectores-de-infrarrojo-medio\/"},"modified":"1995-01-01T00:00:00","modified_gmt":"1995-01-01T00:00:00","slug":"epitaxia-de-haces-moleculares-de-compuestos-de-antimonio-sobre-gaas-001-aplicacion-al-desarrollo-de-detectores-de-infrarrojo-medio","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/ciencias-tecnologicas\/epitaxia-de-haces-moleculares-de-compuestos-de-antimonio-sobre-gaas-001-aplicacion-al-desarrollo-de-detectores-de-infrarrojo-medio\/","title":{"rendered":"Epitaxia de haces moleculares de compuestos de antimonio sobre gaas (001): aplicacion al desarrollo de detectores de infrarrojo medio."},"content":{"rendered":"<h2>Tesis doctoral de <strong>  Perez Camacho Juan  Jose <\/strong><\/h2>\n<p>Se presenta el crecimiento y caracteristicas de nuevas heteroestructuras ga1-x inx sb\/al1-y in y sb en sustratos gaas (001) aplicados al desarrollo de fotodetectores de infrarrojo medio. La respuesta fotovoltaica es similar a la de otros dispositivos de antimonio crecido sobre sustratos gasb (001).  nuestro sistema permite operar en toda la region espectral del infrarrojo medio que resulta imposible de alcanzar con sistemas ga1-x inx as\/a1 1-y in y as en sustratos inp.  para crecer las heteroestructuras pin se ha utilizado epitaxia de haces moleculares.  se ha demostrado la nucleacion bidimensional de gasb y alsb en sustratos gaas (001). En condiciones similares los compuestos ternarios gainsb y alinsb muestran nucleacion tridimensional.  se han obtenido niveles adecuados de dopante en capas ga1-xinx sb y al1-y in y sb utilizando snte y be como dopante de tipos n y p respectivamente.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Epitaxia de haces moleculares de compuestos de antimonio sobre gaas (001): aplicacion al desarrollo de detectores de infrarrojo medio.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Epitaxia de haces moleculares de compuestos de antimonio sobre gaas (001): aplicacion al desarrollo de detectores de infrarrojo medio. <\/li>\n<li><strong>Autor:<\/strong>\u00a0  Perez Camacho Juan  Jose <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Polit\u00e9cnica de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 01\/01\/1995<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Fernando Briones Fernandez Pola<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal:  Oton Sanchez Jos\u00e9 Manuel <\/li>\n<li> Anguita Estefania Jos\u00e9 V. (vocal)<\/li>\n<li>Rafael Garcia Roja (vocal)<\/li>\n<li> Ruiz Y Ruiz De Gopegui Ana (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Perez Camacho Juan Jose Se presenta el crecimiento y caracteristicas de nuevas heteroestructuras ga1-x inx sb\/al1-y in [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[332,9195,16187,16008,3706],"tags":[30913,5457,16569,30912,1631,30914],"class_list":["post-8886","post","type-post","status-publish","format-standard","hentry","category-ciencias-tecnologicas","category-diseno-de-circuitos","category-dispositivos-fotoelectricos","category-politecnica-de-madrid","category-tecnologia-electronica","tag-anguita-estefania-jose-v","tag-fernando-briones-fernandez-pola","tag-oton-sanchez-jose-manuel","tag-perez-camacho-juan-jose","tag-rafael-garcia-roja","tag-ruiz-y-ruiz-de-gopegui-ana"],"_links":{"self":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/8886","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/comments?post=8886"}],"version-history":[{"count":0,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/posts\/8886\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/media?parent=8886"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/categories?post=8886"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.deberes.net\/tesis\/wp-json\/wp\/v2\/tags?post=8886"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}