{"id":99265,"date":"2018-03-11T10:20:17","date_gmt":"2018-03-11T10:20:17","guid":{"rendered":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/procesos-de-implantacion-ionica-para-semiconductores-de-banda-intermedia\/"},"modified":"2018-03-11T10:20:17","modified_gmt":"2018-03-11T10:20:17","slug":"procesos-de-implantacion-ionica-para-semiconductores-de-banda-intermedia","status":"publish","type":"post","link":"https:\/\/www.deberes.net\/tesis\/sin-categoria\/procesos-de-implantacion-ionica-para-semiconductores-de-banda-intermedia\/","title":{"rendered":"Procesos de implantaci\u00f3n i\u00f3nica para semiconductores de banda intermedia."},"content":{"rendered":"<h2>Tesis doctoral de <strong> Javier Olea Ariza <\/strong><\/h2>\n<p>Los semiconductores de banda intermedia tienen el potencial de incrementar la eficiencia m\u00e1xima de los dispositivos fotovoltaicos en la tercera generaci\u00f3n de c\u00e9lulas solares mediante la absorci\u00f3n de fotones de energ\u00eda menor a la del bandgap. Una de l as opciones para fabricar este tipo de semiconductores es la introducci\u00f3n de impurezas con niveles profundos en concentraciones por encima del l\u00edmite de mott. Para ello, la t\u00e9cnica de implantaci\u00f3n i\u00f3nica es una herramienta fundamental, ya que permite  introducir pr\u00e1cticamente cualquier elemento en la concentraci\u00f3n requerida. Para reparar la red da\u00f1ada en la implantaci\u00f3n es necesario un recocido posterior. La t\u00e9cnica de recocido con laser pulsado permite no solo reparar la red, sino obtener un mat erial sobresaturado con una concentraci\u00f3n de impurezas por encima del l\u00edmite de solubilidad s\u00f3lida.  en la primera parte de esta tesis doctoral se analizan las propiedades estructurales y el\u00e9ctricas del si implantado con ti en altas dosis y recocido con laser pulsado. Tras el an\u00e1lisis se modelan las propiedades de transporte el\u00e9ctrico a partir de la teor\u00eda del banda intermedia. Se concluye que el material resultante tiene unas caracter\u00edsticas adecuadas para fabricar c\u00e9lulas solares de banda inte rmedia.  en la segunda parte se estudian las propiedades del gap implantado con ti en altas dosis, demostrando que bajo condiciones normales el recocido con laser pulsado no es capaz de obtener una l\u00e1mina superficial cristalina de calidad. Adem\u00e1s, se  estudian las propiedades \u00f3pticas y el\u00e9ctricas del ganxas1-x obtenido mediante crecimiento epitaxial, desarrollando un modelo para estimar la movilidad en funci\u00f3n de la temperatura, la concentraci\u00f3n de portadores y la concentraci\u00f3n de n.<\/p>\n<p>&nbsp;<\/p>\n<h3>Datos acad\u00e9micos de la tesis doctoral \u00ab<strong>Procesos de implantaci\u00f3n i\u00f3nica para semiconductores de banda intermedia.<\/strong>\u00ab<\/h3>\n<ul>\n<li><strong>T\u00edtulo de la tesis:<\/strong>\u00a0 Procesos de implantaci\u00f3n i\u00f3nica para semiconductores de banda intermedia. <\/li>\n<li><strong>Autor:<\/strong>\u00a0 Javier Olea Ariza <\/li>\n<li><strong>Universidad:<\/strong>\u00a0 Complutense de Madrid<\/li>\n<li><strong>Fecha de lectura de la tesis:<\/strong>\u00a0 19\/02\/2010<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<h3>Direcci\u00f3n y tribunal<\/h3>\n<ul>\n<li><strong>Director de la tesis<\/strong>\n<ul>\n<li>Germ\u00e1n Gonz\u00e1lez D\u00edaz<\/li>\n<\/ul>\n<\/li>\n<li><strong>Tribunal<\/strong>\n<ul>\n<li>Presidente del tribunal: Juan  Andr\u00e9s de Agapito serrano <\/li>\n<li>Antonio Luque l\u00f3pez (vocal)<\/li>\n<li>Fernando Briones fernandez pola (vocal)<\/li>\n<li>Luis Artus surroca (vocal)<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Tesis doctoral de Javier Olea Ariza Los semiconductores de banda intermedia tienen el potencial de incrementar la eficiencia m\u00e1xima de [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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